1/6 kgf1322 ? electronic components this version: jul. 1998 previous version: jan. 1998 general description the kgf1322, housed in a ceramic package with integrated heat sink, is a discrete uhf-band power fet that features high efficiency, high output power, and low current operation. the kgf1322 specifications are guaranteed to a fixed matching circuit for 5.8 v and 850 mhz; external impedance-matching circuits are also required. because of its high efficiency, high output power (more than 33 dbm), and low thermal resistance, the kgf1322 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as digital cellular phones. features ? high output power: 33 dbm (min.) ? high efficiency: 60% (min.) ? low thermal resistance: 12 c/w (typ.) ? package: 3phtp package dimensions ? electronic components kgf1322 power fet (ceramic package type) e2q0040-38-71 3.30.15 7.30.15 2.30.05 3.10.15 0.1250.05 0.630.15 3.50.05 1.7 0.2 0.50.05 (unit: mm) 4.70.15 1.10.15 4.50.15 package material pin treatment plate thickness lead frame material al 2 0 3 ni/au plating au:1.0 m m or more fe-ni-co alloy 5.9 max
2/6 kgf1322 ? electronic components circuit marking x x x x monthly lot number production month (1-9,x,y,z) production year (lowest digit) K1322 (1) product name lot number (2) (3) (1) gate (2) source (3) drain gate(1) drain(3) source(2)
3/6 kgf1322 ? electronic components absolute maximum ratings electrical characteristics *1 condition: f = 850 mhz, v ds = 5.8 v, i dsq = 240 ma item v ds symbol condition max. unit drain-source voltage gate-source voltage total power dissipation channel temperature v gs p tot t ch ta = 25c 10 0.4 5 150 v v w c storage temperature t stg 125 c min. C6.0 C45 ta = tc = 25c ta = 25c drain current i ds ta = 25c 3 a item p o symbol condition max. unit output power dbm min. 33.0 60 (*1), p in = 22 dbm typ. drain efficiency h d (*1), p in = 22 dbm % (ta = 25c) thermal resistance r th c/w 12 channel to case v gs(off) gate-source cut-off voltage C2.6 v C3.6 v ds = 3 v, i ds = 4 ma i dss drain current a 2.0 v ds = 1.5 v, v gs = 0 v i ds(off) drain-source leakage current 1.5 ma v ds = 10 v, v gs = C6 v i gdo gate-drain leakage current 0.5 ma v gd = C16 v i gss gate-source leakage current 0.1 ma v gs = C6 v
4/6 kgf1322 ? electronic components rf characteristics
5/6 kgf1322 ? electronic components typical s parameters freq(mhz) 500.0 mag(s 11 ) ang(s 11 ) mag(s 21 ) ang(s 21 ) mag(s 12 ) ang(s 12 ) mag(s 22 ) ang(s 22 ) v ds = 5.8 v, i ds = 240 ma 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.941 0.939 0.939 0.937 0.937 0.935 0.933 0.932 0.930 0.930 0.926 0.925 0.920 0.921 0.915 0.916 0.913 0.909 0.907 0.904 0.903 0.900 0.897 0.895 0.891 0.887 C151.20 C157.04 C161.53 C165.06 C167.96 C170.53 C172.69 C174.68 C176.46 C178.20 C179.81 178.70 177.39 175.86 174.46 173.22 171.70 170.64 169.24 167.93 166.79 165.54 164.25 163.01 161.64 160.49 3.945 3.325 2.878 2.542 2.273 2.052 1.869 1.731 1.602 1.501 1.406 1.322 1.256 1.181 1.132 1.077 1.036 0.992 0.953 0.918 0.887 0.853 0.830 0.799 0.781 0.755 95.29 90.96 86.91 80.53 77.50 75.04 72.26 70.02 67.31 64.99 62.62 60.34 58.29 53.69 51.72 49.37 47.61 45.18 43.47 41.07 39.39 37.42 35.16 33.63 0.032 0.033 0.034 0.035 0.035 0.036 0.037 0.038 0.038 0.039 0.040 0.041 0.042 0.043 0.044 0.045 0.046 0.047 0.048 0.049 0.051 0.051 0.053 0.053 0.054 0.053 24.38 23.33 22.90 22.86 23.33 23.14 23.63 23.81 24.52 24.26 24.96 25.06 25.40 25.57 25.34 25.63 25.70 25.35 25.72 25.16 25.17 24.40 23.73 23.10 21.96 22.01 0.697 0.699 0.702 0.702 0.704 0.702 0.703 0.703 0.703 0.702 0.702 0.700 0.701 0.698 0.698 0.698 0.696 0.696 0.693 0.693 0.686 0.689 0.685 0.688 0.686 0.693 C176.88 C178.02 C178.91 C179.73 179.81 178.93 178.55 177.88 177.60 176.77 176.48 175.79 175.46 174.77 174.66 173.77 173.63 172.90 172.71 172.00 171.74 171.27 171.07 170.79 170.71 170.54 55.93 83.63
6/6 kgf1322 ? electronic components typical s parameters v ds = 5.8 v, i ds = 240 ma frequency : 0.5 to 3.0 ghz z 0 = 50 w
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